The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 26, 1984
Filed:
Oct. 07, 1980
Susumu Iesaka, Tokyo, JP;
Tokyo Shibaura Denki Kabushiki Kaisha, Kawasaki, JP;
Abstract
A semiconductor device including at least first and second transistors having their respective emitter regions of a first conductivity type formed in a common base layer of a second conductivity type, the semiconductor device comprising a first electrode formed on the emitter region of the first transistor, the first electrode extending on that portion of the base layer which surrounds the emitter region of the second transistor, a second electrode formed on the base layer at the opposite side of the emitter region of the first transistor to that side of the base layer where the second transistor is formed, a first semiconductor region formed in the emitter region of the second transistor, the first semiconductor region having the second conductivity type and extending from the major surface of the emitter region of the second transistor to the base layer, an insulation film formed on the first semiconductor region, a portion of the first semiconductor region being left uncovered with the insulation film, a second semiconductor region formed in the first semiconductor region, the second semiconductor region having the first conductivity type and extending from the surface of the emitter region of the second transistor to the base layer, and a third electrode formed on the emitter region of the second transistor and the first semiconductor region.