The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 19, 1984

Filed:

Jan. 17, 1983
Applicant:
Inventors:

Bernard A Denis, Mennecy, FR;

David B Eardley, Stanfordville, NY (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C / ;
U.S. Cl.
CPC ...
365154 ; 365174 ;
Abstract

Two memory cells each can be entirely fabricated in only two isolation beds. In one embodiment each bed contains one lateral PNP and one vertical NPN transistor in a merged structure. To obtain faster switching speeds, the PNP transistors are cross-coupled as flip-flop transistors while the NPN transistors act as load transistors. A word select signal is applied to forward bias the base-emitter junctions of the NPN load transistors, to thereby generate a potential difference between bit lines coupled to the emitters of the PNP flip-flop transistors.


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