The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 19, 1984
Filed:
Jun. 09, 1983
Applicant:
Inventors:
Daniel Delagebeaudeuf, Paris, FR;
Trong L Nuyen, Paris, FR;
Assignee:
Thomson-CSF, Paris, FR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
357 22 ; 357 15 ; 357 16 ; 357 61 ;
Abstract
The invention relates to semiconductor devices of the transistor type operating at high frequencies. In order to make the drain/source current characteristic linear with the voltage applied to the grid and in order to retain a construction technology which is compatible with existing technologies the invention provides an Al.sub.x Ga.sub.1-x As layer between the substrate and the active GaAs layer. A supplementary, highly doped, GaAs layer and a supplementary semi-insulating Al.sub.x Ga.sub.1-x As layer modify the source and drain access resistances and the output resistance. Application to devices operating at ultra-high frequencies.