The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 19, 1984

Filed:

Jan. 05, 1983
Applicant:
Inventors:

Kenji Murakami, Yokohama, JP;

Seiji Hayashi, Isahaya, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01C / ;
U.S. Cl.
CPC ...
338308 ; 338314 ; 357 51 ; 357 59 ;
Abstract

A resistive element which is formed in a semiconductor substrate comprises a first semiconductor region which is formed in the semiconductor substrate and in which an impurity is diffused at a first concentration; a second semiconductor region which is connected to the first semiconductor region at one end and in which an impurity is diffused at a second concentration higher than the first impurity concentration; a third semiconductor region which is connected to the first semiconductor region at the other end and in which an impurity is diffused at a third concentration higher than the first impurity concentration; and the second and third semiconductor regions respectively including a portion whose cross section has a smaller area than the area of a boundary defined by the second and third semiconductor region with the first semiconductor region.


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