The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 19, 1984
Filed:
Mar. 08, 1982
Applicant:
Inventor:
Yukun Hsia, Santa Ana, CA (US);
Assignee:
McDonnell Douglas Corporation, Long Beach, CA (US);
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; B01J / ;
U.S. Cl.
CPC ...
2957 / ; 29571 ; 2957 / ; 29578 ; 148-15 ; 148187 ; 357 42 ; 357 91 ;
Abstract
This combination process enables both MNOS and CMOS devices to be fabricated upon the same wafer in very large scale integration systems. Conventional moat isolation techniques are replaced with low temperature ion implantation processing to accomplish substrate isolation. Both n and p channel MOS transistor diffusions and field oxidations are processed concurrently. Also, this process utilizes bulk silicon wafer material rather than epitaxial wafer material as the substrate.