The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 12, 1984
Filed:
Jul. 19, 1982
Jiroh Sakaguchi, Hino, JP;
Hitachi, Ltd., Tokyo, JP;
Abstract
A reference voltage generator includes a first n-channel MISFET which has a p.sup.+ -type polycrystalline silicon gate electrode, and second and third n-channel MISFETs which have n.sup.+ -type polycrystalline silicon gate electrodes. The first MISFET has its gate and source coupled in common. The second MISFET has its gate coupled to the drain of the first MISFET, and has its source coupled to an output terminal. The third MISFET is supplied across its gate and source with a voltage which is delivered to the output terminal. First and second bias currents to be supplied to the first and second MISFETs respectively are made levels proportional to the drain current of the third MISFET. As a result, the output voltage of the output terminal is made a level which is substantially in agreement with the difference between the threshold voltages of the first and second MISFETs. The output voltage of this circuit is allowed to exhibit favorable temperature characteristics by properly setting the ratio of the first bias current and the second bias current.