The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 12, 1984
Filed:
Sep. 19, 1983
Applicant:
Inventor:
Kevin T Hankins, Palm Bay, FL (US);
Assignee:
Harris Corporation, Melbourne, FL (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; B44C / ; C03C / ; C03C / ;
U.S. Cl.
CPC ...
156626 ; 156653 ; 156657 ; 1566591 ; 156662 ; 427 93 ;
Abstract
A polycrystalline silicon fuse is formed to have a thickness below 1000 Angstroms by depositing a polycrystalline silicon layer to a thickness greater than 1200 Angstroms, oxidizing the polycrystalline silicon in a partially rich oxygen atmosphere to under 1000 Angstroms, removing the oxide layer over at least a sample fuse and measuring the thickness of the polycrystalline silicon.
Hankins, Kevin. (1984). Controlled thermal-oxidation thinning of polycrystalline silicon (U.S. Patent No. 4454002). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/4454002
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile