The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 05, 1984
Filed:
Jan. 29, 1982
Satoshi Shinozaki, Yokohama, JP;
Abstract
A programmable semiconductor memory device with an emitter follower type poly-silicon fuse comprises: a first semiconductor region of first conductivity type; a first insulation layer for separating elements formed in the first semiconductor region; a second semiconductor region of second conductivity type connected to the first semiconductor region, and formed in an island fashion by the first insulation layer; a third semiconductor region of first conductivity type provided in the second semiconductor region; a poly-silicon wiring layer connected to the third semiconductor region and extending over the first insulation layer, the poly-silicon wiring layer containing high concentration impurity of first conductivity and serving as a fuse; a first insulating film formed on the surface of the poly-silicon wiring layer; a second insulating film formed on the side face of the poly-silicon wiring layer; and an electrode connected to the second semiconductor region through a contact hole formed in self-alignment with the second insulating film.