The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 05, 1984
Filed:
Jun. 11, 1981
Adrianus Sempel, Eindhoven, NL;
U.S. Philips Corporation, New York, NY (US);
Abstract
A field-effect capacitance includes a first region of a first conductivity type in a semiconductor layer, which region is provided with at least one contact electrode connected to a first terminal and with an insulated electrode arranged on said region and connected to a second terminal. A second semiconductor region of a second conductivity type opposite to the first conductivity type is formed in the semiconductor layer, which second region is provided with at least one contact electrode coupled to the first terminal, and with an insulated electrode arranged on said second region and connected to the second terminal. The two capacitances thus formed are then alternately operative for alternate polarities of the signal voltage. The resulting capacitance structure is suitable for high signal voltage applications, and provides a smooth transition when alternate signal polarities are applied.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile