The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 05, 1984
Filed:
May. 10, 1982
Fuji Electric Company, Ltd., Kawasaki, JP;
Abstract
Disclosed is an production method for plasma chemical vapor deposition (CVD) of amorphous silicon films providing improved throughput and film yield. According to the present invention, a glow discharge is generated in a reaction chamber containing a gaseous silicon-containing compound, such as monosilane (SiH.sub.4) or tetraflourosilane (SiF.sub.4), by the imposition of an electric field between a pair of spaced-apart electrodes within the chamber. The electric field is established by connecting an appropriate DC or high frequency driving voltage to one of the pair of electrodes and ground potential to the other. In the case where a high frequency driving voltage is used, connection to the driven electrode is made through a coupling capacitor, and the frequency of the driving voltage is selected such that a DC potential develops between the pair of electrodes. Substrates on which amorphous silicon films are to be deposited are positioned adjacent to each one of the electrodes, and the connections for the driving voltage and ground to the electrodes are periodically reversed during film deposition. In an alternative embodiment of the invention, multiple pairs of electrodes are arranged within the reaction chamber.