The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 29, 1984
Filed:
May. 13, 1983
Applicant:
Inventor:
David P Tanner, Thousand Oaks, CA (US);
Assignee:
Atlantic Richfield Company, Los Angeles, CA (US);
Primary Examiner:
Int. Cl.
CPC ...
B32B / ;
U.S. Cl.
CPC ...
428447 ; 427 39 ; 427 85 ; 427 87 ; 427 95 ;
Abstract
Amorphous silicon having a high band gap is formed by glow discharge in an atmosphere containing H.sub.2 and SiH.sub.4 in a ratio of at least approximately 9 to 1. The partial pressure of H.sub.2 and SiH.sub.4 is preferably no more than 1 torr, and the power density of the discharge is preferably no more than 0.08 watts per square centimeter. In the intrinsic form, the material of the present invention has a band gap of approximately 1.95 electron volts (eV). Similar p-type material, formed by adding B.sub.2 H.sub.6 to the gas atmosphere at approximately 500 parts per million (ppm), has a band gap as high as 1.90 eV.