The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 29, 1984
Filed:
Sep. 27, 1982
Applicant:
Inventor:
Guy Dubois, Grenoble, FR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
156656 ; 29578 ; 29591 ; 156657 ; 1566591 ; 156662 ; 156668 ; 357 51 ; 357 59 ; 357 67 ; 357 71 ; 430314 ; 430315 ;
Abstract
A process for manufacturing high-resistance elements for integrated circuits, in which the resistors are positioned on a layer of silica covering an integrated circuit, in a polycrystalline silicon zone possessing high resistivity, current supply lines being formed of a layer of polycrystalline silicon possessing low resistivity, surmounted by a layer of tantalum silicide. Plugs of photosensitive resin, deposited on a layer of polycrystalline silicon, are used to mark out a zone where the resistor is to be positioned, from zones in which resistivity is reduced by doping, and also to 'lift-off' the layer of tantalum silicide on top of the resistor position.