The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 22, 1984
Filed:
May. 20, 1981
Sumio Terakawa, Osaka, JP;
Kenju Horii, Shiga, JP;
Matsushita Electronics Corporation, Osaka, JP;
Abstract
A solid-state image sensor in which a light signal charge transfer means comprising a metal oxide semiconductor (MOS) vertical shift register and switching elements is provided so that the light signal charge stored in the photoelectric transducer elements in one column in an (m.times.n) photoelectric transducer matrix array is simultaneously transferred to a vertical transmission line; and another charge transfer means comprising a transfer gate means and storage capacitor elements transfers the light signal charge transferred onto the vertical transmission line to a horizontal shift register from which the light signal charge is transferred to an output stage. The horizontal shift register comprises a charge-coupled device (CCD) type horizontal shift register. The solid-state image sensor can eliminate blooming caused by the incidence of light with a high intensity and smear caused by the incidence of light on the areas except predetermined light reception areas.