The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 22, 1984
Filed:
Aug. 24, 1982
Junichi Nishizawa, Miyagi, JP;
Tadahiro Ohmi, Miyagi, JP;
Handotai Kenkyu Shinkokai, Sendai, JP;
Abstract
A gallium arsenide semiconductor integrated circuit having a driver transistor constructed as a normally-configured bipolar mode static induction transistor having an n.sup.+ source region provided in a main or outer surface thereof and having an n.sup.+ buried region which serves as a drain region thereof. A bipolar, an insulated gate field-effect transistor or a resistor may be employed as a load for the driver transistor. Both the driver transistor and the load are formed on a semi-insulating substrate, preferably a p-type high resistivity material. Schottky diodes may be provided at the output terminals of the driver transistor so that wired-OR and wired-NOR logic functions may be readily implemented.