The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 22, 1984
Filed:
Jun. 21, 1982
Monti E Aklufi, San Diego, CA (US);
The United States of America as represented by the Secretary of the Navy, Washington, DC (US);
Abstract
A maskless technique is disclosed for shaping semiconductor materials by ming areas that are selectively etchable with respect to the rest of the structure. In one embodiment of this invention, a body of amorphous material is subjected to radiation by a focused energy beam so as to convert a predetermined region of the amorphous material into a region of crystalline material. The converted region etches at a slower rate than the non-converted amorphous material. In a second embodiment of the present invention, a method of selectively etching a metal is disclosed which includes the step of subjecting a predetermined region of the metal to be impinged upon by a shaped ion beam so as to ion implant the predetermined region. A chemical etch is applied to the metal and to the ion implanted region of the metal and the ion implanted region etches at a slower rate than the portion of the metal outside the ion implanted region. In another embodiment of the present invention, a method of selectively etching a dielectric is disclosed which includes the step of subjecting a predetermined region of the dielectric to be impinged upon by a shaped ion beam so as to ion implant the predetermined region. A chemical etch is applied to the dielectric and to the ion implanted region of the metal and the ion implanted region etches at a faster rate than the portion of the dielectric outside the ion implanted region.