The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 15, 1984
Filed:
Feb. 02, 1981
Toshiaki Tsuchiya, Iruma, JP;
Manabu Itsumi, Hoya, JP;
Nippon Telegraph & Telephone Public Corporation, Tokyo, JP;
Abstract
A semiconductor memory device comprises a gate electrode provided via a gate insulating film on a semiconductor layer formed on a substrate and two diffused semiconductor regions provided to form a field effect transistor together with the gate electrode. An electrical charge is supplied to one of the diffused regions from the other region to thereby vary a width of a space charge layer appearing around the one diffused region so that informations '1' and '0' are selectively stored in the device. The stored information is read-out by detecting presence or absence of a buried channel between the space charge layer and the substrate.