The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 15, 1984
Filed:
May. 21, 1982
Applicant:
Inventor:
Yoichi Akasaka, Hyogo, JP;
Assignee:
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Primary Examiner:
Int. Cl.
CPC ...
C30B / ; H01L / ;
U.S. Cl.
CPC ...
156603 ; 156612 ; 156D / ; 156D / ; 156D / ; 156D / ; 148-15 ; 2957 / ; 2957 / ; 427 531 ;
Abstract
A method of manufacturing a semiconductor device utilizing a monocrystalline silicon layer includes forming and irradiating a polycrystalline silicon layer to increase the grain size thereof, and forming an epitaxial layer thereover. Both layers are then irradiated to convert them into high quality monocrystalline silicon.