The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 01, 1984
Filed:
Jun. 27, 1980
Applicant:
Inventors:
Takashi Mizusaki, Tokyo, JP;
Tadayuki Matsuo, Sendai, JP;
Masayoshi Esashi, Sendai, JP;
Hiroshi Abe, Sendai, JP;
Assignee:
Olympus Optical Co. Ltd., , JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; G01N / ;
U.S. Cl.
CPC ...
357 25 ; 357 23 ; 357 54 ; 204 / ; 204419 ;
Abstract
An ion sensor and more particularly ion sensitive field effect transistor comprising an inorganic film, and an impurity layer formed in at least surface layer of said inorganic film by thermal diffusion or ion implantation.