The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 24, 1984
Filed:
Sep. 14, 1981
Applicant:
Inventors:
Jean-Jacques Godart, Paris, FR;
Bernard Le Clerc, Paris, FR;
Assignee:
Thomson-CSF, Paris, FR;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H03B / ;
U.S. Cl.
CPC ...
3311 / ; 331 96 ; 3311 / ; 3311 / ;
Abstract
A device using a dielectric resonator with a very low temperature coefficient in a very high frequency transistor oscillator (3 to 10 GHz) so as to benefit both from the very high power available and the maximum frequency stabilization due to the resonator. In the case of a FET, the gate is connected to one end of a line coupled to a dielectric resonator at a point along the line situated at a quarter wavelength from the other end of the line, which in turn is connected through a discrete resistor to a half wavelength open circuit line. Thus, the oscillation is damped when the frequency varies from the resonant frequency of the resonator.