The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 24, 1984

Filed:

Jun. 26, 1981
Applicant:
Inventor:

Mohamed I Elmasry, Waterloo, CA;

Assignee:

Burroughs Corporation, Detroit, MI (US);

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H03K / ; H03K / ;
U.S. Cl.
CPC ...
307450 ; 307448 ;
Abstract

Disclosed is a field effect current mode logic gate comprised of a current source for supplying a constant current, and a differential amplifier having first and second branches for passing respective portions of the constant current. The first branch includes a plurality of parallel-coupled or serially-coupled enhancement field effect transistors having a positive threshold voltage and having respective gates for receiving respective input logic signals; and the second branch includes a depletion field effect transistor having a negative threshold voltage, and a grounded gate. The magnitudes of the current portions in the first and second branches are representative of the magnitude of the input logic signals relative to the positive threshold voltage plus the absolute value of the negative threshold voltage.


Find Patent Forward Citations

Elmasry, Mohamed. (1984). Field effect current mode logic gate (U.S. Patent No. 4445051). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/4445051

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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