The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 24, 1984
Filed:
Jan. 06, 1983
Eugene C Whitcomb, Mission Viejo, CA (US);
Rockwell International Corporation, El Segundo, CA (US);
Abstract
An anisotropic etching processing for fabricating a solid state device which consists of the steps of providing a layer of silicon on the substrate and depositing a layer of molysilicide on the silicon layer. The molysilicide layer is then masked to define a pattern thereon. The unmasked portions of the molysilicide layer is then etched using a plasma etch gas mixture consisting essentially of CF.sub.4, C.sub.2 F.sub.6, O.sub.2 in the approximate ratio 50:5:2 in percent by volume. Etching through polysilicon is performed anisotropically using a plasma etch gas mixture consisting essentially of CCl.sub.2 F.sub.2 and C.sub.2 F.sub.6 in approximately the ratio 10:1 in percent by volume.