The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 24, 1984
Filed:
Aug. 27, 1982
Applicant:
Inventor:
Christopher Slawinski, Katy, TX (US);
Assignee:
Texas Instruments Incorporated, Dallas, TX (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
148187 ; 29571 ; 2957 / ; 29578 ;
Abstract
An MOS-type VLSI device is made by a process which provides a planar surface yet maintains geometric control for narrow line widths. The field oxide is recessed by etching the surface of a semiconductor body using thick masking for active device areas. Deposition of field oxide with poor step coverage allows the sidewall to be removed, leaving the top of the field oxide at the same level as the original silicon surface. The thick mask areas are lifted off, resulting in a planar oxide-insulated pattern for formation of transistors or N+ conductive lines.