The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 24, 1984
Filed:
Apr. 12, 1982
Applicant:
Inventor:
Michel X de Brebisson, Caen, FR;
Assignee:
U.S. Philips Corporation, New York, NY (US);
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
29578 ; 2957 / ; 2957 / ; 29580 ; 148-15 ; 148187 ; 156648 ; 156653 ; 156657 ; 1566611 ; 156667 ;
Abstract
A method is disclosed for the self-aligned manufacture of a semiconductor device having island insulation obtained by thermal oxidation. An insulating layer (preferably of silicon oxide), a layer of silicon nitride, and a layer preferably of aluminum oxide are provided successively on the semiconductor surface. In the last-mentioned layer a basic mask is formed having apertures at the area of all the semiconductor zones to be formed and at the area of the island insulation zones. From this mask the various processes are carried out via a replica mask obtained in the nitride layer.