The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 17, 1984
Filed:
Feb. 04, 1981
Applicant:
Inventors:
Ichiro Imaizumi, Tokyo, JP;
Masatoshi Kimura, Hachioji, JP;
Shikayuki Ochi, Akishima, JP;
Masayoshi Yoshimura, Tokyo, JP;
Takashi Yamaguchi, Tachikawa, JP;
Toyomasa Koda, Kokubunji, JP;
Assignee:
Hitachi, Ltd., Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; H01L / ;
U.S. Cl.
CPC ...
357 53 ; 357 35 ; 357 51 ;
Abstract
A high-breakdown-voltage semiconductor device wherein a resistor body made of a P-type impurity region is disposed in a surface region of an N-type semiconductor body so as to form a resistor element, a P-type low doped region is disposed around the resistor body, and a plate layer which extends from a high potential electrode of the resistor body covers a main part of the P-type low doped region.