The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 17, 1984
Filed:
Oct. 13, 1981
Applicant:
Inventors:
Graham S Tubbs, Houston, TX (US);
James E Ponder, Cat Spring, TX (US);
Assignee:
Texas Instruments Incorporated, Dallas, TX (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; H01L / ;
U.S. Cl.
CPC ...
357 42 ; 357 59 ; 357 91 ; 357 23 ;
Abstract
An improved CMOS device and method of making it are provided which utilize basically the standard N-channel self-aligned silicon gate structure and process, modified to include a P-channel transistor. A P-type substrate is used as the starting material, with an N-type tank formed for the P-channel transistor. Field oxide is grown after the N-type tank is formed. A polycrystalline silicon layer is deposited and patterned to create gates for both N- and P-channel transistors, then separately masked P- and N-type diffusions or implants form the sources and drains for the two types of transistors.