The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 17, 1984
Filed:
Apr. 23, 1983
Robert A Keppel, Seabrook, TX (US);
Samuel J Tremont, Manchester, MO (US);
Emerson H Lee, Creve Coeur, MO (US);
George D Davis, Creve Coeur, MO (US);
Monsanto Company, St. Louis, MO (US);
Abstract
Attrition resistant metal/oxygen compositions comprising the infusion and reaction product of an alumina existing in a crystal form selected from the group consisting of .gamma., .delta., .eta., and .chi. crystal forms, and mixtures thereof, or that can be transformed by heat to such crystal forms, and characterized by a mean particle size from about 10 .mu.m to about 200 .mu.m, a fractional porosity of at least 0.2, a surface area of at least 150 m.sup.2 /g, and a pore diameter such that at least 10 percent of the pores are less than 55 .ANG., and at least one metal oxide, or compound convertible by heat to such metal oxide, having a maximum mean particle size of about 100 .mu.m, with the proviso that the alumina/metal oxide mean particle size ratio is at least 2, which metal oxide is susceptible of undergoing infusion and reaction with the alumina upon being subjected to temperatures of at least 0.4 T.sub.m for a time sufficient to cause infusion and reaction between the metal oxide and the alumina, wherein T.sub.m is the melting point in .degree.K. of the alumina, are useful in a wide variety of metal oxide-catalyzed reactions. The compositions are especially useful in reactions which involve reaction conditions of high stress, for example, vapor phase oxidations under fluidized bed conditions.