The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 10, 1984
Filed:
Nov. 23, 1981
Roger J Malik, Little Silver, NJ (US);
Thomas R AuCoin, Ocean City, NJ (US);
The United States of America as represented by the Secretary of the Army, Washington, DC (US);
Abstract
Disclosed is an epitaxial layer field effect transistor having a planar dd barrier gate formed on an n-type semiconductor planar channel region between drain and source terminals formed on the surface of the channel region. The semiconductor channel region is fabricated on a semiconductor substrate, preferably GaAs and being separated therefrom by one or more semiconductor planar buffer regions. The planar doped barrier gate comprises an n.sup.+ -.pi.-p.sup.+ -.pi. structure grown by molecular beam epitaxy over the n-type channel region. Application of an electrical potential to the gate modulates the channel charge depletion in the semiconductor channel region underlying the gate causing a variation in the channel conductance laterally between the source and drain terminals.