The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 10, 1984
Filed:
Jul. 29, 1981
Applicant:
Inventor:
Kesao Noguchi, Tokyo, JP;
Assignee:
Nippon Electric Co., Ltd., Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C / ;
U.S. Cl.
CPC ...
2041 / ; 357-2 ; 357-4 ; 427 38 ; 427 39 ; 427 86 ;
Abstract
A semiconductor film is prepared by a method wherein a substrate is first disposed as one electrode within a reaction chamber. A supply of semiconductor material is fed into the reaction chamber as the other electrode while introducing a fluoride semiconductor material into said reaction chamber. A high frequency electric field is generated within the reaction chamber to ionize the semiconductor material and decompose the fluoride of the semiconductor material, whereby an amorphous semiconductor film is deposited on the substrate.