The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 27, 1984
Filed:
Dec. 28, 1981
Martin E Poulsen, New Providence, NJ (US);
Frederick Vratny, Berkeley Heights, NJ (US);
Alfred Zacharias, Plainfield, NJ (US);
Bell Telephone Laboratories, Incorporated, Murray Hill, NJ (US);
Abstract
It has been discovered that the diffusion of hydrogen species into the outside or water-cooled surface of a pure palladium anode included in an X-ray source causes various deleterious effects. To avoid these effects, a limited-depth hydrogen-barrier layer made, for example, of Pd.sub.3 Sn is formed within the anode extending from the outside surface thereof. The inside or target surface and a major extent of the palladium anode remain virtually unaffected during the forming step. The desired palladium emission characteristic of the anode is thereby preserved. In practice, the modified anode remains free of hydrogen and, as a result, exhibits a particularly advantageous long-life property. Such an anode constitutes an important part of a high-power X-ray lithographic system adapted for making VLSI devices.