The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 27, 1984
Filed:
Dec. 21, 1981
Jeffrey R Fox, Concord, MA (US);
GTE Laboratories Incorporated, Waltham, MA (US);
Abstract
A metal-oxide-silicon (MOS) field effect transistor (FET) regenerative differential comparator circuit particularly suited for use in sigma-delta modulation apparatus. The circuit includes two differential amplifier stages followed by a latching amplifier stage. A regenerative latching section of two cross-connected latching FET's is connected to the latching amplifier stage. Each of the latching FET's is connected in series with a separate switching FET. A strobe pulse turns on the two switching FET's enabling the latching FET's. Depending on the relative polarity of the differential voltage produced by the latching amplifier stage, regenerative action drives one of the two latching FET's into heavy conduction thereby producing an appropriate digital output. The first two differential amplifier stages remain enabled during the regenerative action permitting high speed operation.