The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 20, 1984
Filed:
Oct. 06, 1978
Paul W Casper, Melbourne, FL (US);
William B Ashley, Indialantic, FL (US);
Harris Corporation, Cleveland, OH (US);
Abstract
A photodiode receiver circuit having self-contained automatic gain control and which is temperature compensated over a wide operating range contains a resistor coupled in series between a bias power supply and one end of an avalanche photodiode. Self-generated AGC action results from the fact that the gain of an avalanche photodiode increases as the bias voltage applied across the diode increases. As the light intensity received by the diode increases, there is a corresponding increase in the current flow through the diode and the series-connected resistor. The consequential increase in IR drop across the resistor decreases the bias voltage across the diode, so that the gain of the diode is reduced. Through this action, the dynamic range of optical input of the photodiode will be increased for a fixed dynamic range of electrical output. Temperature compensation is achieved by coupling a temperature-sensitive voltage divider circuit between the bias voltage supply and the gain-controlling resistor. This voltage divider network may include a thermistor coupled in parallel with one resistor component of a resistor divider that is connected to a bias voltage source. The value of the parallel resistor is chosen to match the thermistor's characteristic to the voltage versus temperature characteristic of the APD so that a temperature-compensated bias voltage reference, to which the gain-controlling resistor is connected, is available over a wide temperature range (e.g. -40.degree. C. to +60.degree. C.). This temperature compensation allows the avalanche photodiode to be operated at a nearly constant available gain across this range and prevents the diode from being damaged by too high a bias voltage.