The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 20, 1984
Filed:
Jul. 12, 1982
Roberto Romano-Moran, Centerville, OH (US);
NCR Corporation, Dayton, OH (US);
Abstract
A process for forming memory quality silicon dioxide and silicon nitride dual-dielectric structures in the same LPCVD furnace system by: forming the silicon dioxide at atmospheric pressure at a temperature of 700.degree.-850.degree. using dry oxygen; heat treating the silicon dioxide layer in ammonia; and forming silicon nitride at 400-600 millitorr and 700.degree.-850.degree. C. using dichlorosilane and ammonia. Optionally, a dielectric layer of silicon oxynitride can be formed on the oxide by using N.sub.2 O, ammonia and dichlorosilane obtaining a memory device with improved retention and endurance.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile