The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 20, 1984
Filed:
Mar. 26, 1982
Applicant:
Inventors:
Bernard K Bischoff, Putnam Valley, NY (US);
William J Patrick, Fishkill, NY (US);
Thomas H Strudwick, Wappingers Falls, NY (US);
Assignee:
International Business Machines Corporation, Armonk, NY (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
156603 ; 156D / ; 148187 ; 148188 ;
Abstract
A wide precipitate-free-zone (PFZ) is formed at the surface of a semiconductor substrate and at the same time a high density of oxygen precipitate particles are produced beneath at the surface PFZ by a two step annealing process involving a first cycle of very rapidly heating the wafers to a first high temperature and a second cycle of very slowly heating the wafers to a second high temperature.
Bischoff, Bernard. (1984). Method for tailoring oxygen precipitate particle density and (U.S. Patent No. 4437922). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/4437922
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile