The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 06, 1984
Filed:
Nov. 02, 1982
Ulrich Schwabe, Munich, DE;
Erwin Jacobs, Vaterstetten, DE;
Siemens Aktiengesellschaft, Berlin and Munich, DE;
Abstract
The invention provides a method for manufacturing adjacent tubs implanted with dopant material ions in the manufacture of LSI complementary MOS field effect transistor circuits (CMOS circuits), and also provides a method sequence for a CMOS process adapted to tub manufacture. In accordance with the principles of the invention, for the greatest possible spatial separation of the tubs, a p-tub (5) is produced before a n-tub (8) and an undercutting (25) of a nitride layer (4) serving as the implantation mask in the p-tub production is intentionally produced, so that, during a subsequent oxidation, the edge of the oxidation is shifted toward the outside by about 1 to 2 .mu.m. Further, the penetration depth x.sub.jn of the n-tub (8) is set smaller by a factor at least equal to 4 relative to the penetration depth x.sub.jp of the p-tub (5), whereby the thickness of the n-doped epitaxial layer (2) and the penetration depth x.sub.jp are about matched to one another. The two tubs are separately implanted and diffused. As a result of the inventive sequences, the disadvantages of mutual, extensive compensation of the p-tub and the n-tub are avoided.