The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 28, 1984
Filed:
Jan. 29, 1982
Akira Yoshikawa, Higashiyamato, JP;
Akitsu Takeda, Tokyo, JP;
Osamu Ochi, Sayama, JP;
Tomoko Hisaki, Tokyo, JP;
Yoshihiko Mizushima, Fuchu, JP;
Nippon Telegraph & Telephone Public Corp., Tokyo, JP;
Abstract
In a method of pattern formation according to this invention, an organic polymer resist material is simultaneously used with an inorganic resist material, i.e., a first desired pattern consisting of the organic polymer resist material layer is formed on a substrate material, then the whole surface thereof is covered with the inorganic resist material layer, a second desired pattern is then formed with the inorganic resist material layer, and then the resulting second desired pattern is transferred to the organic polymer resist material. According to the invention, mask alignment can automatically be effected by detecting reflected light from an alignment mark on the substrate, formation of a relief including large and small patterns is also easily carried out, throughput can also be increased. The method of the invention may be combined with various process steps, so that such combined method is applicable for deep and shallow etching, formation of an interlayer insulation film, and lift-off method.