The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 28, 1984
Filed:
May. 14, 1982
Applicant:
Inventors:
Assignee:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
2957 / ; 29578 ; 29580 ; 29591 ; 148174 ; 148175 ; 148187 ; 148188 ; 156628 ; 156647 ; 156649 ; 156657 ; 357 35 ; 357 50 ; 357 59 ; 357 92 ;
Abstract
A method of manufacturing a semiconductor device wherein grooves are formed between vertical type-npn transistors and insulating oxide layers are formed on the bottoms of the grooves, thereby preventing parasitic p-n junctions, which is characterized in that said grooves are formed by using as a mask a conductive pattern containing an impurity for forming an impurity region or by using as a mask an insulating film formed by the annealing of the conductive pattern.