The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 28, 1984
Filed:
Feb. 15, 1983
Applicant:
Inventor:
Alvin M Goodman, Princeton, NJ (US);
Assignee:
RCA Corporation, New York, NY (US);
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
29571 ; 148174 ; 29589 ;
Abstract
An improved self-aligned conductive gate member formed by suppressing or decreasing the size of the as-deposited grains of polysilicon and by suppressing further grain growth which may occur during a subsequent annealing or processing step. By maintaining the as-deposited grains as small as possible, the initiation of intergranular voids is minimized. This is accomplished by forming a low resistivity oxygen doped polycrystalline silicon layer in place of the conventional polysilicon.