The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 21, 1984

Filed:

May. 10, 1982
Applicant:
Inventors:

Addison B Jones, Yorba Linda, CA (US);

Francis M Erdmann, Anaheim, CA (US);

Assignee:

Rockwell International Corporation, El Segundo, CA (US);

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
29578 ; 29591 ; 29599 ; 357-5 ; 427 62 ;
Abstract

A method of forming a superconductor-barrier-superconductor junction device by the steps of depositing a first superconductive layer on a substrate, forming a barrier layer on the first superconductive layer and depositing a second superconductive layer on the barrier layer. A layer of photoresist is then deposited over the second superconductive layer and patterned together with the second superconductive layer to form a mesa structure. A dielectric layer is deposited over the mesa structure, and the photoresist layer portion is dissolved thereby lifting off the dielectric portion overlying said second superconductive layer portion.


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