The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 14, 1984
Filed:
Jun. 04, 1981
Applicant:
Inventors:
Assignee:
Matsushita Electric Industrial Co., Ltd., Kadoma, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01S / ;
U.S. Cl.
CPC ...
372 46 ; 357 17 ;
Abstract
A very narrow current injection region (16') is made by means of terrace-shaping of the surface of the current limiting layer (13) forming a step thereon, the current limiting layer being on the epitaxially grown double hetero structure layers (10, 11 and 12) including the active layer (11). By so terrace-shaping, when Zn as a p-type impurity to form the current injection region (16) is diffused from the surface of the current limiting layer (13), the diffused region is formed to have a deeper part (16') and a shallower part (16'), and the deeper part (16') can be made very narrow by selecting the position of the stripe-shaped diffused region with respect to the step (14).