The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 14, 1984
Filed:
Aug. 29, 1980
Applicant:
Inventor:
Akira Takei, Yokohama, JP;
Assignee:
Fujitsu Limited, Kawasaki, US;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; G11C / ;
U.S. Cl.
CPC ...
357 23 ; 357 59 ;
Abstract
In a semiconductor memory device of the present, due to a heavily doped region formed on the semiconductor substrate, the depletion layer does not spread deeply toward the interior of the semiconductor substrate. In addition, a capacitor is formed by the heavily doped region, an insulating film formed on this region and a semiconductor layer formed on this insulating film. As a result, variation of capacitance of the capacitor due to .alpha.-ray particles is low. Furthermore, information is stored in the semiconductor layer which is formed above the semiconductor substrate so that the occurrence of a soft error is minimized.