The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 14, 1984
Filed:
Mar. 18, 1982
Applicant:
Inventors:
Claus Holm, Teising, DE;
Erhard Sirtl, Marktl/Inn, DE;
Assignee:
Consortium fur Elektrochemische Industrie GmbH, Munich, DE;
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
C30B / ; C30B / ; C30B / ; C30B / ;
U.S. Cl.
CPC ...
156606 ; 156612 ; 156D / ; 156D / ; 427 85 ; 427 86 ;
Abstract
A process for making doped semiconductor bodies in thick sheets by epitaxial growth of a doped monocrystalline semiconductor layer on a substrate body by means of a transfer reaction, the transfer system being so arranged that dead spaces are avoided and that within the transfer system a gradient of maximally 1.degree. C./mm is maintained. The invention makes it possible to obtain doped layers of larger thickness than heretofore known.