The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 14, 1984
Filed:
Jan. 11, 1980
Cornelis M Hart, Sunnyvale, CA (US);
U.S. Philips Corporation, Tarrytown, NY (US);
Abstract
A semiconductor device is fabricated by a process in which an aperture (4) is an insulating layer (3) along a surface (2) of a semiconductor body is utilized in defining the lateral extents of zones (6, 7, and 8) in a circuit element of the device. In particular, the insulating layer is first provided with the aperture along the surface. A semiconductor layer (5) is formed on the insulating layer, including the portion within the aperture. Using the edge of the insulating layer along the aperture as a masking edge, a pair of opposite-conductivity dopants are introduced selectively into the aperture and a third dopant is introduced through all of the aperture into the body. The third dopant may be introduced into the body before the semiconductor layer is formed.