The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 07, 1984
Filed:
Dec. 02, 1981
Trong L Nuyen, Paris, FR;
Baudouin de Cremoux, Paris, FR;
Thomson-CSF, Paris, FR;
Abstract
A semiconductor laser wherein a wide range of laser emission wavelengths can be obtained by varying the composition of monocrystalline alloys employed as semiconductor material. The semiconductor structure comprises on a monocrystalline indium phosphide substrate of a predetermined conductivity type successive epitaxial layers consisting of a first confinement layer of the same conductivity type, an active layer having the formula (Ga.sub.x Al.sub.1-x).sub.0.47 In.sub.0.53 As where x is within the range of 0 to 0.27, and a second confinement layer of opposite conductivity type. The confinement layers are composed of either InP or a ternary alloy Al.sub.0.47 In.sub.0.53 As or a quaternary alloy Ga.sub.x' Al.sub.1-x' As.sub.y' Sb.sub.1-y' where x' and y' are chosen so that the material should have a predetermined crystal lattice and an energy gap of greater width than the substrate material.