The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 31, 1984
Filed:
Jun. 10, 1981
Applicant:
Inventor:
Peter J de Waard, Eindhoven, NL;
Assignee:
U.S. Philips Corporation, New York, NY (US);
Primary Examiner:
Int. Cl.
CPC ...
H01S / ;
U.S. Cl.
CPC ...
372 45 ; 357 17 ; 372 46 ;
Abstract
A semiconductor laser with a double hetero junction includes a strip-shaped semiconductor contact layer which is present on a passive layer of the same conductivity type, with a highly doped zone of the same conductivity type which extends over at least a part of the thickness of the contact layer and beside the contact layer in the passive layer so as to increase the radiation mode stability. According to the invention, the highly doped zone extends only over a part of the thickness of the passive layer in such a manner that below and beside the contact layer a difference in effective refractive index of at least 0.0005 and at most 0.005 is obtained.