The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 31, 1984
Filed:
Nov. 21, 1979
Tomoyuki Watanabe, Kodaira, JP;
Kenji Kaneko, Hachioji, JP;
Tohru Nakamura, Houya, JP;
Yutaka Okada, Kokubunji, JP;
Takahiro Okabe, Hinodemachi, JP;
Minoru Nagata, Kodaira, JP;
Yokichi Itoh, Hachioji, JP;
Toru Toyabe, Kokubunji, JP;
Hitachi, Ltd., Tokyo, JP;
Abstract
An I.sup.2 L type nonvolatile memory of this invention has a structure wherein a floating gate is disposed through an insulating film on the surface of a semiconductor layer in the vicinity of a base region of an NPN transistor in an I.sup.2 L. The I.sup.2 L type nonvolatile memory of this invention controls current to flow through the base region of the NPN transistor of the I.sup.2 L, by means of charges to be stored in the floating gate. That is, the collector output current of the NPN transistor of the I.sup.2 L is modulated in dependence on the presence or absence of a channel underneath the floating gate as is generated depending on the presence or absence of charges within the floating gate and the polarity of the charges. As a result, the variation of the base current appears as an output signal at a collector terminal of the NPN transistor of the I.sup.2 L, and data stored in the floating gate can be read out.