The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 31, 1984
Filed:
Dec. 14, 1981
Applicant:
Inventor:
Cord Gessert, Burghausen, DE;
Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
148172 ; 148173 ; 148187 ; 29572 ; 2957 / ; 1566 / ;
Abstract
The invention makes it possible to manufacture silicon wafers having vertical p-n junctions as the basic material for solar cells. As a result of simultaneously adding certain dopants that act in the silicon crystal as donors and certain dopants that develop acceptor properties and also as a result of measures that result in a periodic change in the crystal growth from a low rate v.sub.n to a high rate v.sub.n, p- and n-conductive zones are produced in the silicon, each having a total length of from 5 to 2000 .mu.m.