The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 24, 1984
Filed:
Aug. 14, 1981
Applicant:
Inventors:
Narasipur G Anantha, Hopewell Junction, NY (US);
Harsaran S Bhatia, Wappingers Falls, NY (US);
Santosh P Gaur, Wappingers Falls, NY (US);
James L Walsh, Hyde Park, NY (US);
Assignee:
International Business Machines Corporation, Armonk, NY (US);
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
357 21 ; 357 89 ;
Abstract
A dynamic memory cell has a P+ injector region surrounded by an N+ region in an N- layer on an N+ layer. The injector region is placed between N+ source and drain regions. Holes injected into the N-layer are trapped by the high-low junctions at the N+, N- interfaces and are detected by sensing the source-drain current. Current levels are used to establish binary one and zero levels in the cell. Four masks in an aligned procedure simplify fabrication.