The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 24, 1984
Filed:
Dec. 07, 1982
Applicant:
Inventors:
Yok Chen, Oak Ridge, TN (US);
Roberto Gonzalez, Knoxville, TN (US);
Geoffrey P Summers, Stillwater, OK (US);
Assignee:
Primary Examiner:
Int. Cl.
CPC ...
C09K / ; C01F / ;
U.S. Cl.
CPC ...
2523 / ; 423636 ; 423640 ;
Abstract
A crystal having a high-quantum efficiency and a long period of luminescence is formed of an oxide selected from the group consisting of magnesium oxide and calcium oxide and possessing a concentration ratio of H.sup.- ions to F centers in the range of about 0.05 to about 10.
Chen, Yok. (1984). High-quantum efficiency, long-lived luminescing refractory oxides (U.S. Patent No. 4427570). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/4427570
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile