The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 24, 1984
Filed:
Mar. 04, 1983
Applicant:
Inventors:
Hyman J Levinstein, Berkeley Heights, NJ (US);
Frederick Vratny, Berkeley Heights, NJ (US);
Assignee:
Bell Telephone Laboratories, Incorporated, Murray Hill, NJ (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C / ;
U.S. Cl.
CPC ...
2041 / ; 156345 ; 156643 ; 204298 ;
Abstract
In a plasma-assisted etching apparatus and method designed to pattern silicon dioxide in a plasma derived from a mixture of trifluoromethane and ammonia, surfaces in the reaction chamber are coated with a layer of silicon. Contamination of wafers during the etching process is thereby substantially reduced. In practice, this leads to a significant increase in the yield of acceptable chips per wafer.