The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 17, 1984
Filed:
Nov. 18, 1982
David E Thompson, Placentia, CA (US);
The United States of America as represented by the Secretary of the Army, Washington, DC (US);
Abstract
Disclosed is a method of producing an integrated optical grating device having extremely low scattering losses. The method employs a highly polished and prepared silicon chip for receiving a grating pattern or any other surface relief feature on the silicon wafer surface for its predetermined use. The pattern after it is generated is etched to a predetermined period, for example, when the pattern is for a waveguide device. An SiO.sub.2 growth layer is thermally grown to a thickness of about 4 to 8 micrometers to replicate the generated pattern in the SiO.sub.2 growth layer. This method yields a waveguide or similar optical grating device having undulations of extremely low values as determined by SEM photographs of this device.